unisonic technologies co., ltd MJE13003-V npn silicon transistor www.unisonic.com.tw 1 of 9 copyright ? 2014 unisonic technologies co., ltd qw-r204-034.a npn silicon power transistor ? description these devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. they are particularly suited for 115 and 220v applications in switch mode. ? features * reverse biased soa with inductive load @ t c =100c * inductive switching matrix 0.5 ~ 1.5 amp, 25 and 100c typical t c = 290ns @ 1a, 100c. * 700v blocking capability ? applications * switching regulator?s, inverters * motor controls * solenoid/relay drivers * deflection circuits
MJE13003-V npn silicon transistor unisonic technologies co., ltd 2 of 9 www.unisonic.com.tw qw-r204-034.a ? ordering information ordering number package pin assignment packing lead free halogen-free 1 2 3 mje13003l-v-x-ta3-t mje13003g-v-x-ta3-t to-220 b c e tube mje13003l-v-x-tm3-t mje13003g-v-x-tm3-t to-251 b c e tube mje13003l-v-x-tms-t mje13003g-v-x-tms-t to-251s b c e tube mje13003l-v-x-tn3-r mje13003g-v-x-tn3-r to-252 b c e tape reel mje13003l-v-x-t60-f-k mje13003g-v-x-t60-f-k to-126 b c e bulk mje13003l-v-x-t6c-a-k mje13003g-v-x-t6c-a-k to-126c e c b bulk mje13003l-v-x-t6c-f-k mje13003g-v-x-t6c-f-k to-126c b c e bulk mje13003l-v-x-t6s-f-k mje13003g-v-x-t6s-f-k to-126s b c e bulk mje13003l-v-x-t92-a-b mje13003g-v -x-t92-a-b to-92 e c b tape box mje13003l-v-x-t92-a-k mje13003g-v-x-t92-a-k to-92 e c b bulk mje13003l-v-x-t92-f-b mje13003g-v-x-t92-f-b to-92 b c e tape box mje13003l-v-x-t92-f-k mje13003g-v-x-t92-f-k to-92 b c e bulk mje13003l-v-x-t9n-b mje13003g-v-x-t9n-b to-92nl e c b tape box mje13003l-v-x-t9n-k mje13003g-v-x- t9n-k to-92nl e c b bulk ? marking to-220/to-251/to-251s/to-252 to-126/to-126c/to-126s to-92 to-92nl
MJE13003-V npn silicon transistor unisonic technologies co., ltd 3 of 9 www.unisonic.com.tw qw-r204-034.a ? absolute maximum ratings parameter symbol ratings unit collector-emitter voltage v ceo ( sus ) 400 v collector-base voltage v cbo 700 v emitter base voltage v ebo 9 v collector current continuous i c 1.5 a peak (1) i cm 3 base current continuous i b 0.75 a peak (1) i bm 1.5 emitter current continuous i e 2.25 a peak (1) i em 4.5 power dissipation t a =25c to-126/to-126c to-126s p d 1.4 w to-92/to-92nl 1.1 w to-220 2 w to-251/to-251s to-252 1.56 w t c =25c to-126/to-126c to-126s 20 w to-92/to-92nl 1.5 w to-220 40 w to-251/to-251s to-252 25 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied.
MJE13003-V npn silicon transistor unisonic technologies co., ltd 4 of 9 www.unisonic.com.tw qw-r204-034.a ? electrical characteristics (t c =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics (note) collector-emitter sustaining voltage v ceo ( sus ) i c =10ma , i b =0 400 v collector cutoff current t c =25c i ceo v ceo =rated value, v be(off) =1.5 v 1 ma t c =100c 5 emitter cutoff current i ebo v eb =9v, i c =0 1 ma second breakdown second breakdown collector current with bass forward biased is/b see fig.5 clamped inductive soa with base reverse biased rb soa see fig.6 on characteristics (note) dc current gain h fe1 i c =0.5a, v ce =5v 14 57 h fe2 i c =1a, v ce =5v 5 30 collector-emitter satu ration voltage v ce(sat) i c =0.5a, i b =0.1a 0.5 v i c =1a, i b =0.25a 1 i c =1.5a, i b =0.5a 3 i c =1a, i b =0.25a, t c =100c 1 base-emitter satura tion voltage v be(sat) i c =0.5a, i b =0.1a 1 v i c =1a, i b =0.25a 1.2 i c =1a, i b =0.25a, t c =100c 1.1 dynamic characteristics current-gain-bandwidth product f t i c =100ma, v ce =10v, f=1mhz 4 10 mhz output capacitance c ob v cb =10v, i e =0, f=0.1mhz 21 pf switching characteristics resistive load (table 1) delay time t d v cc =125v, i c =1a, i b1 =i b2 =0.2a, t p =25 s, duty cycle 1% 0.05 0.1 s rise time t r 0.8 1 s storage time t s 1.2 4 s fall time t f 0.75 1.00 s inductive load, clamped (table 1) storage time t stg i c =1a, v clamp =300v, i b1 =0.2a, v be(off) =5v dc , t c =100c 1.7 4 s crossover time t c 0.29 0.75 s fall time t f 0.15 s note: pulse test: pw=300 s, duty cycle 2% ? classification of h fe1 rank a b c d e f g h range 14 ~ 22 21 ~ 27 26 ~ 32 31 ~ 37 36 ~ 42 41 ~ 47 46 ~ 52 51 ~ 57
MJE13003-V npn silicon transistor unisonic technologies co., ltd 5 of 9 www.unisonic.com.tw qw-r204-034.a ? application information table 1.test conditions for dynamic performance reverse bias safe operating area and inductive switching resistive switching test circuits +125v r b d1 -4.0v scope rc tut circuit values coil data : gap for 30 mh/2 a v cc =20v ferroxcube core #6656 l coil =50mh v clamp =300v full bobbin ( ~ 200 turns) #20 v cc =125v r c =125 ? d1=1n5820 or equiv. r c =47 ? test waveforms output waveforms +10.3 v 25 s 0 -8.5v tr, tf<10ns duty cycly=1.0% r b and rc adjusted for desired i b and ic ic (a) tc (c) t sv ( s) t rv ( s) t fi ( s) t ti ( s) tc ( s) 0.5 1 1.5 25 100 1.3 1.6 0.23 0.26 0.30 0.30 0.35 0.40 0.30 0.36 25 100 1.5 1.7 0.10 0.13 0.14 0.26 0.05 0.06 0.16 0.29 25 100 1.8 3 0.07 0.08 0.10 0.22 0.05 0.08 0.16 0.28 table 2. typical inductive switching performance note: all data recorded in the inductive switching circuit in table 1 time i cpk 90% v clamp i c t sv t rv t fi t ti v clamp 10% v clamp t c 90% ic 2% ic 10% i cpk v ce i b 90% i b1 fig.1 inductive switching measurements
MJE13003-V npn silicon transistor unisonic technologies co., ltd 6 of 9 www.unisonic.com.tw qw-r204-034.a ? switching times note in resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. however, for inductive loads, which are common to switch mode power supplies and hammer drivers, current and voltage waveforms are not in phase. therefore, separ ate measurements must be made on each waveform to determine the total switching time . for this reason, the following new terms have been defined. t sv = voltage storage time, 90% i b1 to 10% v clamp t rv = voltage rise time, 10 ~ 90% v clamp t fi = current fall time, 90 ~ 10% i c t ti = current tail, 10 ~ 2% i c t c = crossover time, 10% v clamp to 10% i c for the designer, there is minimal switching loss duri ng storage time and the predominant switching power losses occur during the crossover interval and c an be obtained using the standard equation: p swt = 1/2 v cc i c (t c ) f in general, t rv + t fi t c . however, at lower test currents th is relationship may not be valid. as is common with most switching transistors, resistive switching is specified at 25c and has become a benchmark for designers. however, for designers of high frequency converter circuits, the user oriented specifications which make this transisto r are the inductive switching speeds (t c and t sv ) which are guaranteed at 100c. resistive switching performance t i m e , t ( c ) 0.02 0.05 0.5 2 1 0.7 0.2 0.1 0.02 0.1 0.2 0.3 collector current, i c (a) t r 20 t d @ v be(off) =5v vcc=125v ic/i b =5 t j =25c 0.07 t i m e , t ( c ) 0.02 0.05 1 10 7 2 1 0.5 0.2 0.1 0.2 0.5 2 0.3 0.1 t s 0.5 0.3 0.05 0.03 0.03 0.07 0.7 10 vcc=125v ic/i b =5 t j =25c t f 5 3 0.7 0.03 0.07 0.3 0.7 collector current, i c (a) fig.2 turn-on time fig.3 turn-off time e f f e c t i v e t r a n s i e n t t h e r m a l r e s i s t a n c e , r ( t ) ( n o r m a l i z e d ) fig.4 thermal response
MJE13003-V npn silicon transistor unisonic technologies co., ltd 7 of 9 www.unisonic.com.tw qw-r204-034.a ? safe operating area information forward bias there are two limitations on the power handling ability of a transistor: av erage junction temperature and second breakdown. safe operating area curves indicate i c -v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of fig.5 is based on t c = 25c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25c. second breakdown limitations do not derate the same as thermal limitations. allowa ble current at the voltages shown on fig.5. t j(pk) may be calculated from the data in fig.4. at high case temperatures , thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during tu rn-off, in most cases, with the base to emitter junction reverse biased. under thes e conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as rb soa ( reverse bias safe operating area) and repr esents the voltage-cu rrent conditions during reverse biased turn-off. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. fig.6 gives rb soa characteristics. the safe operating area of fi g.5 and 6 are specified ratings (for these devices under t he test conditions shown.) c o l l e c t o r c u r r e n t , i c ( a ) c o l l e c t o r c u r r e n t , i c ( a ) fig.5 active region safe operating area fig.6 reverse bias safe operating area
MJE13003-V npn silicon transistor unisonic technologies co., ltd 8 of 9 www.unisonic.com.tw qw-r204-034.a ? typical characteristics d c c u r r e n t g a i n , h f e 0.02 dc current gain 0.03 0.05 2 80 60 40 30 20 1 0 8 4 0.1 0.2 0.3 0.5 0.7 collector current,i c (a) c o l l e c t o r - e m i t t e r v o l t a g e , v c e ( v ) 0.002 collector saturation region 0.005 0.01 1 2 1.6 1.2 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 base current, i b (a) 2 v ce =2v ------v ce =5v -55c 25c tj=150c 6 0.07 1 t j =25c 1.5a 1a 0.5a 0.3a ic=0.1a v o l t a g e , v ( v ) 0.02 base-emitter voltage 0.03 0.05 2 1.4 1.2 1 0.8 0.6 0.4 0.1 0.2 0.3 0.5 0.7 25c 25c 150c v o l t a g e , v ( v ) 0.02 collector-emitter saturation region 0.03 0.05 0.5 0.35 0.25 0.2 0.15 0.05 0 0.1 0.2 0.3 1 2 collector current, i c (a) 25c v be(sat) @ i c /i b =3 ------v be(on) @ v ce =2v t j =-55c 150c t j =-55c ic/i b =3 0.3 0.1 0.07 0.7 0.07 1 c o l l e c t o r c u r r e n t , i c ( a ) -0.4 collector cut-off region -0.2 +0.6 0+0.2 +0.4 base-emitter voltage, v be (v) v ce =250v 100c t j =150c 75c 50c 25c reverse forward c a p a c i t a n c e , c ( p f ) 0.1 capacitance 0.5 50 500 300 200 100 70 30 20 5 1 2 5 10 20 reverse voltage, v r (v) 100 1000 50 10 7 125c 10 4 10 3 10 2 10 1 10 0 10 -1 c ib c ob t j =25c 0.2 200 500 collector current,i c (a)
MJE13003-V npn silicon transistor unisonic technologies co., ltd 9 of 9 www.unisonic.com.tw qw-r204-034.a ? typical characteristics(cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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